A study on polycrystalline 3C-SiC etching with magnetron applied reactive ion etching for M/NEMS applications

A Review of SiC Reactive Ion Etching in Fluorinated Plasmas

Research and development in semiconducting silicon carbide (SiC) technology has produced significant progress in the past five years in many areas: material (bulk and thin film) growth, device fabrication, and applications. A major factor in this rapid growth has been the development of SiC bulk crystals and the availability of crystalline substrates. Current leading applications for SiC device...

Reactive ion etching

The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...

Reactive ion etching of quartz and Pyrex for microelectronic applications

The reactive ion etching of quartz and Pyrex substrates was carried out using CF4 /Ar and CF4 /O2 gas mixtures in a combined radio frequency ~rf!/microwave ~mw! plasma. It was observed that the etch rate and the surface morphology of the etched regions depended on the gas mixture ~CF4 /Ar or CF4 /O2), the relative concentration of CF4 in the gas mixture, the rf power ~and the associated self-in...

Deep Reactive Ion Etching (DRIE)

Reactive Ion Etching of Dielectrics and Silicon for Photovoltaic Applications

Reactive Ion Etching of Dielectrics and Silicon for Photovoltaic Applications Prakash N. K. Deenapanray1*,y, C. S. Athukorala, Daniel Macdonald, W. E. Jellett, E. Franklin, V. E. Everett, K. J. Weber and A. W. Blakers Centre for Sustainable Energy Systems, FEIT, The Australian National University, Canberra ACT 0200, Australia Department of Engineering, FEIT, The Australian National University, ...